Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of
${1}~\mu \text{m}$
has achieved a very high ON/ OFF current ratio (
${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}{)}$
of
$10^{{12}}$
with a low leakage current of
$\sim 10^{-{9}}$
A/cm
²
@-10 V, high forward current density of 5.2 kA/cm
²
at 3 V in dc, a low differential specific ON-resistance (
${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}{)}$
of 0.3
$\text{m}\Omega \cdot $
cm
²
, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP)
${I}$
–
${V}$
test was carried out and 53 kA/cm
²
at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.