Characterization and Ultimate Performance of Compensated n-Type Silicon Bolometer Detectors at Liquid Helium Temperatures

The dependence of the resistivity and FIR absorptance on donor concentration, compensation, and temperature in compensated n-type Si is reported. The effect of environment, time-constant, and spectral-passband on the NEP of the compensated Si bolometer is examined and compared with similar calculations for the compensated Ge bolometer.