A Novel Variation-aware Error Monitoring Scheme for Memristor-based Material Implication Logic

This paper proposes a novel error monitoring scheme for memristor-based Material Implication (IMP) logic. The novel monitoring method utilizes differences in the voltage of source-line (VsL) under different input cases after IMP operation, to detect two major types operation failures caused by gradual degradation phenomenon of memristor's positive threshold voltage (Vclοse). Simulation results under PVT variation show that the proposed error monitoring circuit in 0.18 μm technology can perform successful failure detection within two operation cycles, which can be used for periodic memristors failure detection and adaptively adjusting operation voltages during memristive IMP operation.