L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V

A 10-kW L-band GaN power high-electron mobility transistor (HEMT) has been reported in this paper. The developed 10-kW device was combined with four 150mm gate width AlGaN/GaN HEMT chips, and a balance configuration was used in the device design. When the drain bias condition is 100V, the pulse width is lOus and the period is 10ms, the output power is achieved amazing 10.87 kW at 1.3GHz, and its output power density over 18W/mm with a power gain of 18dB and a power added efficiency (PAE) of about 70%.