Active V-band Frequency Multiplier-by-4 Chain in SiGe HBT technology

This work presents a low supply voltage frequency multiplier-by-4 chain implemented in the 130nm SiGe:BiCMOS technology. The circuit is based on the cascaded frequency doublers in a balanced common emitter topology, in conjunction with driver amplifiers for higher gain. To optimize the power consumption with higher conversion gain, the frequency quadrupler chain is biased in saturation. The frequency quadrupler chain achieves a conversion gain of 3.25 dB with only -6 dBm input power. It operates in V-band (41.1-52 GHz) and the total DC power consumption is 38 mW.