Dual-Band Concurrent LNA with Low Gain Deviation and Low Noise Figure

This paper presents 1.7/3.5 GHz dual-band concurrent LNA with small gain deviation and low NF. Proposed LNA incorporates mutual induction matching circuit and notch filter matching circuit on input and output side to improve gain deviation. Also, a part of the primary inductor of the input matching circuit adopts an external inductor to improve NF. The measured S11, S22, S
₂₁
and NF were -6.44,-15.7,10.9, and 2.67 dB at 1.7 GHz and -7.65, -6.05,10.2 and 2.02 (4.0 GHz) dB at 3.5 GHz, respectively. The power consumption is 14.0 mW from a 1.8 V supply voltage. The proposed LNA is designed and fabricated by using the TSMC-180 nm CMOS process. The concurrent LNA in this study gives the lowest NF in our knowledge.