Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg
_0.03
Zn
_0.97
O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni
_0.02
Mg
_0.15
Zn
_0.83
O (NMZO) serves as the ferroelectric layer in the NMZO/SiO
₂
stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 109.