Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors

This research is focused on the accelerated in-situ neutron radiation failure-in-time test (at a sea-level height) that was performed on 1200V and 1700V SiC power n-MOSFETs from 3 different manufacturers. The test was performed at room temperature and 150 °C with an average neutron flux of 1×10
⁵
n/cm
²
-sec above 1.5 MeV neutron energy. The room temperature samples demonstrated higher FIT values compared to 150 °C samples for both 1200V and 1700V devices. The maximum FIT of 8 and 28 was measured for 1200V and 1700V devices respectively at room temperature.