Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current
${I}_{ \mathrm{\scriptscriptstyle ON}}$
due to LER presents a weak correlation with that of OFF-state current
${I}_{ \mathrm{\scriptscriptstyle OFF}}$
. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of
${I}_{ \mathrm{\scriptscriptstyle ON}}$
, WFV contributed up to 84.7% and 82.8% of the total fluctuations for n- and p-type, respectively.