Negative capacitance GaN HEMT with improved subthreshold swing and transconductance

In this work, the dielectric material HfZrO (HZO) is studied under various annealing temperature. With the annealing temperature up to 600°C, the HZO shows negative capacitance property. After, this negative capacitance dielectric is used in GaN high electron mobility transistor (HEMT). Compared to conventional GaN HEMT without any gate dielectric, the negative capacitance HEMT (NC-HEMT) shows improved subthreshold swing (SS) and transconductance (G
_m
). Besides, the hysteresis in the transfer characteristics does not degrade with the use of negative capacitance gate dielectric.