A 64x1 Fuse Memory with 0.4V/1μA Read and 0.9V Program Voltage on 22nm FD-SOI

A 64x1 fuse memory with 0.4V/1uA read at 200kHz and 25°C on 22nm FD-SOI for battery-less RFID is presented. The fuses are programmed below a break point, so that the fuse can be programmed at 0.9V to enable low voltage read. Read current is very low by using a time-based sensing: comparing the capacitor discharge rates through fuse and reference resistors for data 0 or 1.