Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Sheet resistance (R
_sheet
) reduction of a-few-layered molybdenum disulfide (MoS
₂
) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R
_sheet
in the MoS
₂
film with the Cl
₂
plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS
₂
film.