40 GHz High-Power Photodetector Module

We demonstrate a fully packaged photodetector module based on surface-illuminated modified uni-traveling-carrier (MUTC) photodiode (PD) and investigate its DC and RF characteristics. It has a very a low dark current below 2 nA at the operational reverse bias of 4 V and a responsivity of 0.49 A/W at 1550 nm. The module shows a high f
_3dB
bandwidth of 38 GHz for low optical input powers and excellent linearity with RF output power levels of 11.7 dBm at 40 GHz. The power conversion efficiency η
_PCE
was 6.7% at 40 GHz making it suitable for RF signal generation.