Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects

We report electrically detected magnetic resonance (EDMR) results in Si/SiO
₂
metal-oxide-semiconductor field effect transistors before and after high field gate stressing. The measurements utilize EDMR detected through Si/SiO
₂
interface recombination currents. These interface recombination measurements provide information about one aspect of the stressing damage: the chemical and physical identity of trapping centers generated at and very near the Si/SiO
₂
interface. EDMR signal demonstrates that Si/SiO
₂
interface defects known as Pb centers play important roles in the stress-induced damage.