DG02 - Wide-bandgap materials for future applications

Trap-Assisted-Tunneling through "lucky defects" can be the cause of early failures. Under-sampling can result in severely flawed conclusions about reliability. Instead of contamination control, we should focus on improving the oxide growth process. Good quality SiO
₂
/SiC should be used to revisit the physics of TDDB acceleration in thick SiO
₂
.