Integrated Broadband Power Amplifier for Systemon-Chips Wireless Devices in 65 nm CMOS Process

In connection with the development of wireless technologies, there is the increasing number of small-sized mobile devices. For the operation of such devices, small-sized power amplifiers are required to provide a power of several mW. Increasing requirements for miniaturization lead to the need to develop devices such as systems-on-chip, in which all the IP blocks of the complex device are placed on one substrate. The paper describes the broadband power amplifier operating in the frequency range of 100 MHz...2.5 GHz. The output power is 2 mW, the consumption current is 40 mA. The output SWR does not exceed 2, the output resistance is 50 Ω. The amplifier is developed in the standard process of 65 nm CMOS.