Effect of temperature profile on the formation of CZTSe absorber layer

Cu
₂
ZnSnSe
₄
thin films were deposited on glass substrates in a sequence like; Cu/Zn/Sn/Se/Cu using thermal evaporation method. To prevent the loss of materials from the surface, capping was done by depositing Cu at the top. Post deposition annealing has been carried out at 400 °C with four different ramp time of 2 minutes, 4 minutes, 6 minutes and 8minutesand the samples were named as P2, P4, P6 and P8respectively.The structural, electrical and optical properties of the annealed films were improved for the films with 2 min and 4 min ramp time. The result suggests that the annealing profile has a major impact on CZTSe absorber layer formation.