Passivation of the Recombination Activities with Rubidium incorporation for Efficient and Stable Sn- HaP Solar Cells

A number of non- toxic candidates such as Sn, Ge, Bi, and Sb based halide perovskites, etc. have been explored as Pb free HaPSCs Among these alternatives, Sn-based halide perovskites (Sn-HaP) are promising alternatives. The oxidative instability of tin-based halide perovskite (Sn-HaP) deteriorates the device performance. In this report, we have explored the role of Rb insertion in FASnI
₃
lattice for device performance. The Rb incorporation in crystal lattice facilitates uniform morphology with better crystal quality and suppression of oxidation of Sn
²
+. The device analysis showed higher diffusion potential and mitigation of defect activities with RbCl additive in Sn-HaPSCs. This leads to the improvement in device performance and stability with the power conversion efficiency of ~3 % for pure FASnI
₃
to 6 % for Rb incorporated FASnI
₃
.