Electromigration reliability of dual damascene copper interconnect with different IMD structures

Electromigration behavior of dual damascene Cu interconnect has been investigated comparing PE-TEOS SiO/sub 2/ with fluorine doped SiO/sub 2/ (FSG). MTFs of FSG in both line and contact EM tests were significantly shorter than those of PE-TEOS. The higher compressive stress and fluorine of FSG dielectric are considered to affect the EM reliability performance of the confined Cu interconnect.