Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450/spl deg/C on commercial ALD reactor, employs TBTDET and NH/sub 3/ as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.