Optimization of etching and stripping chemistries for Z3MS/sup TM/ Low-k

Silicon-Oxy-Carbide (SiOC) materials are used as low-k materials for the 2.7-k generation. They can be etched with the fluorinated chemistries used for oxide but some optimizations are needed to achieve acceptable etch-rates and good selectivities. The resist strip is also very sensitive and requires even more development to keep the material properties intact after full damascene integration. Oxygen is useful but it can also cause severe damage. All experiments described in this paper were performed on Z3MS/sup TM/ Low-k(*).