Properties of ion-implanted low-k organic SOG

The properties of ion-implanted low-k organic SOG films were investigated in detail. It was found that the organic species of the SOG were decomposed and that the film density of the SOG was increased by ion implantation. Consequently the oxygen plasma resistance of the ion-implanted SOG film was improved, and a good characteristic was obtained for via resistance. We applied the ion-implanted SOG film to 180 nm Al-based interconnects, and it was found that the film between the metal lines preserves its low-k characteristics (k=3.1). Furthermore, copper diffusion in the organic SOG film was reduced by ion implantation, making it possible to apply the ion-implanted SOG to a Cu diffusion barrier layer.