In-situ Recrystallization of CIGS via Metal Halides

One of the key challenges for furthering the economic viability of thermally evaporated CIGS is the thermal energy required for higher efficiencies. While several techniques have pushed the efficiency of CIGS cells higher, including alkali post deposition treatment, high temperature is often necessary for high efficiency. By using a modified 3-stage process, with low stage 1 and stage 2 deposition temperatures, it is possible to create CIGS absorber layers with high current collection capabilities. By judiciously introducing group IB metal halides it may be possible to further improve device quality while decreasing deposition temperature thus lowering costs.