Characterization of electroless copper as a seed layer for sub-0.1 /spl mu/m interconnects

Complete gapfill of 0.1 /spl mu/m features with electroless Cu seed layers and electroplated Cu was demonstrated. Electrical tests on test structures indicated similar line and via chain resistance, yield and line-to-line leakage current on wafers with electroless Cu seed and PVD Cu seed layers filled with electroplated Cu.