High performance Organic Thin-Film Transistor based on Pentacene/Graphene hybrid structured material

Flexible electronics is one of the trending research areas in the semiconductor industries today. The device compatibility (with different substrates), provision of flexibility, and ease of being lab-processible are the main advantages associated with it. Organic Thin-Film Transistor (OTFT) is used as a superfine device for serving the desired purpose, which utilizes organic semiconductors as an active layer material where Pentacene is the widely used one. In the proposed work, Pentacene based OTFT, and hybrid configuration of Pentacene and Graphene OTFT are simulated to improve the electrostatic behavior of the device. Different thickness (6 nm, 12 nm and 18 nm) of Graphene layers are used in these hybrid structures where an aggressive change in Subthreshold swing and I
_ON
/I
_OFF
have been observed in the case of 18 nm hybrid structure as compared to Pentacene based OTFT with values of 59 mV/dec and 10
₈
respectively. It is observed that a further increase in Graphene thickness shows better on-current. So, in order to best utilization of the device property, the entire active layer is made of Graphene which corresponds to an enhanced on-current of 28 mA and I
_ON
/I
_OFF
of 10
₁₃
.