The largest QWI in the InGaP/InAlGaP laser structure using high compressive strain at elevated temperatures

In this paper, we report the largest bandgap blueshift of 320meV (~105nm) novel quantum well intermixing (QWI) technique in the InGaP/AlInGaP single quantum-well laser structure. We applied external compressive strain using a thick SiO
₂
cap with a thickness ≥ of 1000 nm, annealed at 950°C for the number of cycles from 30-240s of annealing duration to enhance the QWI process. Using this method, wavelength tunability over a range of 640nm to 545nm (320meV) was demonstrated. The emission around ~545nm is the first demonstration of the photoluminescence in the green emission region on InGaP/InAlGaP QW structures.