CMOS process compatible ie-Flash (inverse gate electrode Flash) technology for system-on-a-chip

A highly reliable single-poly flash technology named ie-Flash (inverse gate electrode Flash), which can be embedded in the common 0.14 /spl mu/m CMOS process without any process modifications, has been developed. The ie-Flash cell consists of two elementary cells for OR-logical reading, resulting in significant improvement of reliability. 5 V programming with 1 ms duration and 1.2 V-read operation of 35 bit memory modules fabricated by a 0.14 /spl mu/m CMOS process is demonstrated.