CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics

An analytical model is used for evaluating the DC characteristics of AlGaN/GaN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) having an AlInN back-barrier. The behavior of various parameters such as charge density, carrier concentration, drain current, transconductance, and gate capacitance of the device have been computed by using Cubic Spline Interpolation (CSI) model. Different high-k dielectric materials like Aluminum oxide (Al
₂
O
₃
) and Zirconium dioxide (ZrO
₂
) were considered as oxide layers. A comparison is performed between the IV characteristics of Al
₂
O
₃
and ZrO
₂
MOS-HEMT with the conventional SiO
₂
device by deriving its mathematical dependence. Due to the high-quality interface between ZrO
₂
and the AlGaN barrier layer, the proposed structure has shown to demonstrate excellent current drives. The modeled outcomes match exactly with the experimental results from literature, using the cubic spline interpolation. The proposed device displayed a 28% and 18% enhancement in drain current for ZrO
₂
and Al
₂
O
₃
dielectrics respectively. Due to its high current drive and trans-conductance factor, ZrO
₂
could be considered as an efficient alternative for high power applications like high energy RF acceleration and Radar.