Gated-Anode GaN HEMT Based Diode for Microwave Wireless Power Transfer

We have introduced a gated-anode diode using a normally-off AlGaN/GaN HEMT. For precise control of turn-on voltage without spoiling an advantage of mono-layer controllability in epitaxial growth, we have selectively dry-etched a GaN cap layer to expose AlGaN Schottky layer to a surface. Also, we inserted 5-doped region in the GaN cap layer to compensate negative polarization charges. Using these techniques, we have successful fabricated the normally-off AlGaN/GaN HEMT and the gated-anode diode using the HEMT. The gated-anode diode exhibited an anode current of 0.3 mA/mm at an anode voltage of 2 V and a breakdown voltage of approximately 40 V with a tum-on voltage of 0.3 V.