Reliable 2-D carrier profiling with SSRM on InP-based devices

Reliable application of SSRM on InP-based devices requires the use of particular probes. The application of a pyramid metal probe on InP-based device is limited to one time measurements only with limited quantification accuracy whereas with diamond probes repetitive and quantitative measurements are possible. The latter can be explained by the complex oxidation procedure (enhanced by electrical field and local temperature) occurring during the measurements, which is enhanced by the applied electrical field and local temperature due to severe current crowding.