Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

InP epitaxial films are grown on GaAs substrates by chloride vapor phase epitaxy (C-VPE). Good surface morphology is obtained. TEM observations of the cross-section of InP films show that dislocations generated at the interface between the substrate and the film gradually disappears towards the top surface of InP layers. This report demonstrates the possibility of large-diameter, less-fragile substrates suitable for InP epitaxial growth for high-speed devices such as HEMTs and HBTs.