New length scaling of current gain factor and characterization method for pocket implanted MOSFET's

A new analytical model is proposed for the gain factor channel length dependence /spl beta/(L) observed in advanced MOSFET device architectures with pocket implants. The idea consists of splitting the channel length domain into two regions of different mobility values. This approach has been implemented in the BSIM3V3.2 model for the description of 0.18 /spl mu/m MOSFETs. Very good modeling in a large channel length range for N- and P-MOSFETs is demonstrated.