Channel width and length dependent flicker noise characterization for n-MOSFETs

Gate channel width and length dependent flicker noise analysis and modeling for sub-micron n-channel MOSFETs have been presented. It was found that the flicker noise in the saturation region increased with channel width, contrary to existing theory. Drain current noise density measurements were performed with two different CMOS processes for analysis using our automated 1/f noise measurement system. Since model parameters in the model are all geometry dependent, only one size of device is needed for the extractions.