Analysis of hot carrier effects in low temperature poly-Si TFTs using device simulator

Hot carrier degradation in low temperature poly-Si TFTs was analyzed using a device simulator. Degradation was found to be dominated by drain avalanche hot carriers (DAHC). The LDD structure was effective for improvement of the reliability. Degradation did not depend simply on the amount of hot carriers, but it was confirmed that hot carriers above the threshold energy induce the degradation.