Abstract:
A practical method to extract the contact resistance of a phosphorus-doped poly-Si plug formed on a lightly phosphorus-doped diffusion region in giga-bit DRAM memory cell...Show MoreMetadata
Abstract:
A practical method to extract the contact resistance of a phosphorus-doped poly-Si plug formed on a lightly phosphorus-doped diffusion region in giga-bit DRAM memory cells is proposed. A contact resistance diameter of 130 nm is experimentally obtained by the substrate bias change measurement, which can separate the resistance of a bias-dependent lightly-doped diffusion layer from the total contact chain resistance. This method is effective for process technology development of a low resistance contact formation in giga-bit DRAMs.
Published in: ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
Date of Conference: 19-22 March 2001
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-6511-9
Contents 