Abstract:
In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z2-FET, based on a feedback mechan...Show MoreMetadata
Abstract:
In this work, we review our recent studies on several novel devices built on silicon-on-insulator (SOI) substrates. The sharp-switching Z2-FET, based on a feedback mechanism, has been demonstrated as suitable for many applications. The PISD, capable of in-situ photoelectron sensing, has been used as a one-transistor active pixel sensor (1T-APS). Furthermore, an SOI/MoS2 heterojunction FET has been demonstrated as both a photodetector with a dynamic response spectrum and as a novel one-transistor wavelength detector (1T-WD) with an output signal sensitive to the variation of wavelength rather than intensity.
Date of Conference: 26 June 2020 - 17 July 2020
Date Added to IEEE Xplore: 21 December 2020
ISBN Information: