Development of 90 NM & 5 NM High Resolution Advanced Lithographic Patterning Materials

Directed Self-assembly is a chemical assisted patterning technology, which has attracted a great deal of interest due to its potential high resolution and low cost [1]-[4]. Researchers around the world discovered some sub-5 nm resolution DSA materials with high χ value, which normally requires high annealing temperature or long annealing time. As modern semiconductor manufacturing litho process normally requires hot baking time less than 3 min to ensure cost-effective throughput, fast annealing BCPs thus are essential for future DSA patterning technology. Also our group focus on the development of advanced materials for ArF lithography and we are trying to contribute to China own advanced patterning material industry.