Magnetoelectric Memory Cell Based on Microsized FeGa Films on Ferroelectric 50BZT-50BCT Films

Magnetoelectric memories exhibit the advantages of FRAMs and MRAMs. We report the fabrication of a magnetoelectric memory cell consists of microsized Fe70Ga30 films on ferroelectric 50 [Ba(Zr
_0.2
Ti
_0.8
)O
₃
]-50(Ba
_0.7
Ca
_0.3
TiO
₃
) (50BZT-50BCT) films on Pt/Ti/SiO
₂
/Si substrates. The 50BZT-50BCT films were sputtered by RF magnetron sputtering, ferroelectric hysteresis loop and displacement voltage butterfly loop were characterized which suggest that 50BZT-50BCT thin films exhibit good ferroelectric and piezoelectric properties. Fe
₇₀
Ga
₃₀
films were grown on 50BZT-50BCT films by DC magnetron sputtering deposition combined with photolithography and results indicate that 50BZT-50BCT/Fe
₇₀
Ga
₃₀
composite films have good soft magnetic properties with a coercive field of 50 Gauss at room temperature. The microstructure of the composite films were characterized by X-ray diffraction. The current voltage behaviors of the microsized Fe70Ga30 films were measured, the current voltage curves could be modulated effectively by applying bias electric field, and multilevel resistance states could be induced, and thus a magnetoelectric memory device was obtained which uses electric field as writing field and the resistance of the ferromagnetic layer as the media.