Highly-Sensitive FET-based Sensor via Heterogeneous Selective-Assembling Integration of Porphyrin and Silicon Nanowires

In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si
₃
N
₄
and SiO
₂
, the enrichment of porphyrin molecules on silicon nanowires was achieved, and the device showed highly sensitive photo-sensing even under very low illumination power (ΔVt=3.32V @11.3μW/cm
²
), great dynamic photo-memory characteristic (ΔV
_t
=31.3V @ programming/erasing time of 10s) and excellent temperature sensing (ΔV
_t
=13.6V @ 90°C temperature range). Those performances make the devices applicable to be used in applications of sensitive and smart non-memory light sensing and reliable temperature sensing.