Evaluation of Timepix3 Si and CdTe Hybrid-Pixel Detectors’ Spectrometric Performances on X- and Gamma-Rays

The Timepix3 hybrid-pixel readout chip consists of a matrix made of 256 × 256 square-shaped pixels with a 55-μm pitch, which can be hybridized to several semiconductors, such as silicon (Si) or cadmium telluride (CdTe) with thicknesses up to 5 mm. Working as an event-based readout chip, it simultaneously records the time-over-threshold (ToT) in each pixel, measuring the deposited energy, as well as the time-of-arrival (ToA), with a time resolution of 1.5 ns. In this article, we present the energy calibration of two Timepix3 chips: the first one was bump-bonded with a 300-μm-thick silicon sensor and the second one with a 1-mm-thick CdTe sensor. Both detectors were calibrated with per pixel calibration, using the monochromatic SOurce of Low-Energy X-rays [SOLEX from Henri Becquerel National Laboratory (LNHB) at CEA Saclay] and a set of calibration-grade sealed radioactive sources. Evaluations were carried out over the energy range 6-122 keV for Timepix3 Si and 20 keV- 1.332 MeV for Timepix3 CdTe. Based on this experimental procedure, an energy resolution of 2.6 keV (3.4%) at 59.5 keV was observed for Timepix3 Si. For Timepix3 CdTe, this parameter was 5.6 keV (9.4%) at 59.5 keV, 27.24 keV (4.1%) at 661.7 keV, and 47.4 keV (3.5%) at 1.332 MeV. It is the first time that CdTe bump-bonded Timepix3 spectral performances were evaluated for gamma rays above 1 MeV. The reconstruction of the full-energy peak for such high energies is possible due to the ToA information, which allows the identification of all interactions caused by a given gamma ray within the detector.