Reliability of Instant Bonding of Cu-Cu joints: Thermal Cycling and Electromigration Tests

Hybrid bonding of fine pitch Cu pad and inorganic dielectrics has been carried out for improving chip performance, such as CMOS image sensor, so reliability tests gradually get high attention [1-3]. Thermal stress-induced failure is a big issue for interconnects of chips, and TCT is a popular way for related test [4]. Due to the shrinkage of interconnects for high density I/O, EM damages will play an important role in the future [5]. Each test has unique failure modes, and most of reliability tests depend on the stress or current distribution. Simulation of those distributions are an efficient method to explain the damages of reliability tests [6].