Functional ITO/c-Si heterojunction in the solar radiation spectrum range of 300-1100 nm

The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus the formation by this method of the thin layers SiO
_x
with a thickness of about ~1nm is demonstrated, which allows obtaining photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300 - 1100nm of the solar spectrum is demonstrated.