Effective control of TEOS–PECVD thin film depositions

Deposition parameters of tetraethylorthosilicate (TEOS) layers on silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) method were investigated We design the experiment taking into consideration chamber pressure, substrate temperature, RF Power and mass flow rate (oxygen and TEOS) to asses their influence on deposition rate, film uniformity, refractive index uniformity and film stress. All the results were evaluated for applications that require low temperature processing in order to avoid damage of Microelectromechanical Systems (MEMS) devices.