BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion = 370μA/μm, SS = 73mV/dec and Ion /Ioff Ratio > 4×109

We experimentally demonstrate BEOL compatible (<; 250C thermal budget) 1 % W-doped amorphous In
₂
O
₃
(IWO) back-gate (BGFET) and dual-gate (DGFET) field-effect transistors with 7nm channel thickness. The 100nm channel length IWO DGFET exhibits excellent subthreshold slope (SS) of 73m V /dec, record ID,SAT of 370μA/μm, and on-off ratio > 4×10
⁹
at V
_DS
= 1V and V
_GS
-V
_T
=2V We provide insight into the electrostatic gate control efficiency through temperature and frequency dependent admittance measurement. We identify fundamental transport mechanisms that limit electron mobility inamorphous IWO as a function of gate-bias (V
_GS
) and temperature. Benchmarking shows that IWO DGFET is a promising BEOL transistor for enabling high-performance monolithic three-dimensional (M3D) integrated circuits.