Fast Switching of STT-MRAM to Realize High Speed Applications

We demonstrate less than 10 ns write speed and read access for 40Mb embedded MRAM (eMRAM) macro covering high temperature up to 125°C. The macro shows un-powered data retention of 10 second at 125°C and the capability of achieving 10
¹²
cycles endurance and 5 ns read time. Our study indicates that MTJ stack engineering and MTJ CD optimization are the two critical factors to achieve the suppression of bit error rate (BER) ballooning and 0.5× Ic scaling for fast switching.