Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate

We investigated the effects of quantum confinement in determining the interface traps (D
_it
) and border traps (N
_bt
) of ALD deposited Al
₂
O
₃
with temperature variations onto In
_x
Ga
_1-x
As on a 300-mm Si (001) substrate. We also analysed the impact of these effects on the total gate capacitance of high-k/Si and high-k/In
_x
Ga
_1-x
As structures using 1D Poisson-Schrodinger solver simulation tool (Nextnano). While quantum confinement has no or very little impact on the gate capacitance of high-k/Si structure, it has a considerably high amount of impact on the high-k/In
_x
Ga
_1-x
As structures and substantially lowers the total gate capacitance. To reflect the actual thickness between the insulator-semiconductor interface and charge centroid, capacitance-equivalent-thickness was used to reflect the effects of quantum confinement in the In
_x
Ga
_1-x
As layer. The D
_it
and N
_bt
values extracted using capacitance-equivalent-thickness were observed to be around 10% and 25%, respectively, higher than the values of extraction with equivalent-oxide-thickness.