Dv/dt Induced Failure and Improvement of Power Superjunction MOSFET

The failure Mechanism of Power Superjunction MOSFET (SJ-MOS) under high dv/dt is analyzed. Simulations show that the design of P/N pillars in the drift region of SJ-MOS is significant to the dv/dt induced failure. By optimizing the P/N pillars' width, doping concentration and doping distribution, the voltage and current overshoots in the switching process can be decreased, so as to improve the reliability of SJ-MOS.