The design of power amplifier for 5.8 GHz wireless LAN application using GaAs substrate

This paper describes a compact two-stage hybrid power amplifier for 5.8 GHz-band Wireless Local Area Network (WLAN) applications. The amplifier has been fabricated on high dielectric semiconductor wafer, and then the amplifier has small dimension compared with the conventional hybrid circuits. To fabricate the amplifier, the mask pattern is produced using electron beam lithography. Then the FET, capacitors and resistors are combined with the microstrip line pattern by silver epoxy. The size of the two-stage amplifier is measured to be 2.1 cm/spl times/1.4 cm.