30 GHz active mixer in a Si/SiGe bipolar technology

In this paper we present a 30 GHz active mixer fabricated in a 80 GHz f/sub T/ silicon-germanium bipolar technology. It is based on a Gilbert cell and is capable of broadband operation down to DC. The mixer draws 2 mA from a single supply voltage of 4.9 V. It shows a conversion gain of more than 5.9 dB up to 30 GHz and a double-sideband noise figure of better than 10.2 dB up to 18 GHz.