Hall Sensor with Geometry-enhanced Sensitivity

A novel silicon Hall device with geometry-enhanced sensitivity was fabricated and characterized. The magnetosensitivity was grows with the charge carrier density on the Hall sides. The shape of the edges on which the Lorentz force deflects the electrons has the form of isosceles acute triangles on whose corners the ohmic Hall contacts are formed. The sensors were realized based on n-Si wafers with ρ ≈ 7.5 Ω.cm. The obtained transducer efficiency is by about 20 % higher than the sensitivity of the usual with orthogonal activation Hall element from the same material and with the same input conditions. The new Hall configuration is very promising for low-field magnetometry and robotized surgery.